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Lattice Disorder Produced in GaAs by Cadmium Implantation

  • J. J. Grob
  • A. Ghitescu
  • P. Siffert
Part of the The IBM Research Symposia Series book series (IRSS)

Abstract

The backscattering technique has been used to investigate the lattice disorder produced by implanting 20–60 keV cadmium ions into gallium arsenide. Special emphasis is given to the interpretation of the spectra. It is shown that previous interpretations of the backscattered spectra on compound semiconductors are incorrect, especially concerning the determination of the random level.

Keywords

Compound Semiconductor Gallium Arsenide Lattice Disorder Random Level Backscatter Spectrum 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Plenum Press, New York 1973

Authors and Affiliations

  • J. J. Grob
    • 1
  • A. Ghitescu
    • 1
  • P. Siffert
    • 1
  1. 1.Centre de Recherches NucleairesStrasbourg-CedexFrance

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