Damage Profiles in Ion-Implanted Semiconductors at Low (25°K) Temperatures
The damage profiles of 300-keV Ar+ implants in Si, GaP, GaAs and InP and of 500-keV Kr+ implants in Si, GaP and Ge have been studied theoretically and experimentally. The profiles were measured using the channeling-effeet technique. To minimize any influence of annealing the target was kept at 25°K throughout the implantation and the subsequent back-scattering analysis with 2.0 MeV He+. Reasonable agreement is obtained between the measured and theoretically calculated damage profiles.
KeywordsDamage Distribution Displace Atom Damage Profile Double Power Series Measured Peak Position
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