Damage Profiles in Ion-Implanted Semiconductors at Low (25°K) Temperatures

  • J. Bøttiger
  • J. A. Davies
  • D. V. Morgan
  • J. L. Whitton
  • K. B. Winterbon
Part of the The IBM Research Symposia Series book series (IRSS)


The damage profiles of 300-keV Ar+ implants in Si, GaP, GaAs and InP and of 500-keV Kr+ implants in Si, GaP and Ge have been studied theoretically and experimentally. The profiles were measured using the channeling-effeet technique. To minimize any influence of annealing the target was kept at 25°K throughout the implantation and the subsequent back-scattering analysis with 2.0 MeV He+. Reasonable agreement is obtained between the measured and theoretically calculated damage profiles.


Damage Distribution Displace Atom Damage Profile Double Power Series Measured Peak Position 
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Copyright information

© Plenum Press, New York 1973

Authors and Affiliations

  • J. Bøttiger
    • 1
    • 2
  • J. A. Davies
    • 1
  • D. V. Morgan
    • 1
    • 3
  • J. L. Whitton
    • 1
  • K. B. Winterbon
    • 1
  1. 1.Chalk River Nuclear LaboratoriesCanada
  2. 2.Institute of PhysicsAarhus UniversityAarhusDenmark
  3. 3.Department of Electrical EngineeringUniversity of LeedsLeedsEngland

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