Abstract
The damage profiles of 300-keV Ar+ implants in Si, GaP, GaAs and InP and of 500-keV Kr+ implants in Si, GaP and Ge have been studied theoretically and experimentally. The profiles were measured using the channeling-effeet technique. To minimize any influence of annealing the target was kept at 25°K throughout the implantation and the subsequent back-scattering analysis with 2.0 MeV He+. Reasonable agreement is obtained between the measured and theoretically calculated damage profiles.
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© 1973 Plenum Press, New York
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Bøttiger, J., Davies, J.A., Morgan, D.V., Whitton, J.L., Winterbon, K.B. (1973). Damage Profiles in Ion-Implanted Semiconductors at Low (25°K) Temperatures. In: Crowder, B.L. (eds) Ion Implantation in Semiconductors and Other Materials. The IBM Research Symposia Series. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-2064-7_52
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DOI: https://doi.org/10.1007/978-1-4684-2064-7_52
Publisher Name: Springer, Boston, MA
Print ISBN: 978-1-4684-2066-1
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