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Ion Implanted Silicon-Metal Systems Si1-xMx

  • H. Kräutle
  • S. Kalbitzer
Part of the The IBM Research Symposia Series book series (IRSS)

Abstract

The conditions for metallization of silicon substrates have been studied by implanting high doses of metal ions. Sheet resistivity vs. dose curves have been measured for various ion species and implantation energies. For most metal silicon systems the conditions for metallic conduction can be satisfied in surface layers being approximately 100 Å thick.

Keywords

Metallic Conduction Rutherford Backscattering Projected Range Dose Curve Sheet Resistivity 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Plenum Press, New York 1973

Authors and Affiliations

  • H. Kräutle
    • 1
  • S. Kalbitzer
    • 1
  1. 1.Max-Planck Institut für KernphysikHeidelbergGermany

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