Calorimetric Determination of Optical Absorption in Proton-Bombarded GaAs
In order to distinguish between absorption and scattering as the predominant mechanism for near-band-edge optical attenuation in 400 keV proton-bombared GaAs, calorimetric measurements of absorption at 1.06 µm have been made using a YAG:Nd laser. In Addition, the photon energy dependence between 0.25 and 1.25 eV, and isochronal annealing between 30 and 450°C for proton-induced attenuation have been investigated. The calorimetric measurements combined with transmittance and reflectance measurements show that absorption is the primary cause of the proton-induced attenuation. Absorption near 1.06 µm is fit approximately by an exponential dependence upon photon energy, and is therefore attributed to band tail states. In contrast, a dependence on the square of the photon energy has been observed in other measurements for high fluence Xe ion implantation. Seventy percent of the proton-induced attenuation anneals below 300°C in agreement with previously measured neutron-induced optical attenuation.
KeywordsExponential Dependence Isochronal Annealing Neutron Cross Section Proton Bombardment Optical Attenuation
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