Lateral Stress Measurements in Ion-Implanted Metals and Insulators

  • E. P. EerNisse
Part of the The IBM Research Symposia Series book series (IRSS)

Abstract

The cantilever beam technique has been used for a brief survey of lateral stress in ion-implanted insulators and metals. The lateral stress results for fused silica bombarded with H and He ions compare favorably with other workers’ data obtained with photoelastic measurements. The lateral stress versus fluence curves for H, He, and O ion implants into Ag-phosphate dosimetry glass show structure which can be identified as arising from the superposition of lateral stress introduced by electronic energy deposition and lateral stress introduced by atomic collision energy deposition. These results are the first that use one physical property in the same material to measure the effects of both the energy into electronic processes and the energy into atomic collision processes.

Keywords

Quartz Refraction Reso Erbium 

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Copyright information

© Plenum Press, New York 1973

Authors and Affiliations

  • E. P. EerNisse
    • 1
  1. 1.Sandia LaboratoriesAlbuquerqueUSA

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