Strain Induced Effects on EPR Centers in Silicon Generated By P+ Ion Implantation
Damage distribution in silicon generated by P+ ion implantation was measured by EPR method. It became clear that the peak position of the distribution of the paramagnetic defect center is always located at about 2/3 of the projected range Rp, where ΔHmsl of the signal begins to increase due to the release of the exchange narrowing effect. The g-value observed in the shorter depths than Rp was 2.0058 ± 0.0005 and is identical to that of the center in the amorphous region. At the stopping region of the implanted ions which is around Rp, an increase in the g-value was observed. It can be interpreted that strains caused by the stresses which the implanted ions exert on the surrounding lattice induce that effect.
KeywordsSpin Density Depth Distribution Depth Variation Amorphous Layer Defect Center
Unable to display preview. Download preview PDF.
- 4.K. L. Brower and J. A. Borders, Proc. I Int. Conf. on Ion Implantation in Semiconductors, 309 (1971).Google Scholar
- 5.J. G. de Wit and C. A. J. Ammerlaan, Proc. I Int. Conf. on Ion Implantation in Semiconductors, 39 (1970).Google Scholar
- 6.K. L. Brower and W. Beezhold, Proc. II Int. Conf. on Ion implantation in Semiconductors, 7 (1971).Google Scholar
- 13.T. Tokuyama, Record of the 10th Symposium on Electron, Ion and Laser Beam Technology, 183.Google Scholar
- 14.F. F. Morehead, Jr. and B. L. Crowder, Proc. I Int. Conf. on Ion Implantation in Semiconductors 25 (1970).Google Scholar
- 16.K. H. Eklund and Å. Andersson, Proc. II Int. Conf. on Ion Implantation in Semiconductors, 103 (1971).Google Scholar
- 17.J. Lindhard, M. Scharff, and H. E. Schlott, Kgl. Danske Videnskab, Selskab Mat. Fys. Medd. 33 (14) (1963).Google Scholar
- 18.S. Namba, K. Masuda, K. Gamo, S. Ohba, and K. Murakami, Proc. Int. Conf. on Phys. and Chem. Semiconductor Heterojunctions and Layer Structures (Budapest 1970) 4, 179 (1971).Google Scholar