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Strain Induced Effects on EPR Centers in Silicon Generated By P+ Ion Implantation

  • T. Matsumori
  • T. Kobayashi
  • H. Maekawa
  • T. Izumi
Part of the The IBM Research Symposia Series book series (IRSS)

Abstract

Damage distribution in silicon generated by P+ ion implantation was measured by EPR method. It became clear that the peak position of the distribution of the paramagnetic defect center is always located at about 2/3 of the projected range Rp, where ΔHmsl of the signal begins to increase due to the release of the exchange narrowing effect. The g-value observed in the shorter depths than Rp was 2.0058 ± 0.0005 and is identical to that of the center in the amorphous region. At the stopping region of the implanted ions which is around Rp, an increase in the g-value was observed. It can be interpreted that strains caused by the stresses which the implanted ions exert on the surrounding lattice induce that effect.

Keywords

Spin Density Depth Distribution Depth Variation Amorphous Layer Defect Center 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Plenum Press, New York 1973

Authors and Affiliations

  • T. Matsumori
    • 1
  • T. Kobayashi
    • 1
  • H. Maekawa
    • 1
  • T. Izumi
    • 1
  1. 1.Department of Electronic Engineering, Faculty of EngineeringTokai UniversityShibuya, TokyoJapan

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