Abstract
Damage distribution in silicon generated by P+ ion implantation was measured by EPR method. It became clear that the peak position of the distribution of the paramagnetic defect center is always located at about 2/3 of the projected range Rp, where ΔHmsl of the signal begins to increase due to the release of the exchange narrowing effect. The g-value observed in the shorter depths than Rp was 2.0058 ± 0.0005 and is identical to that of the center in the amorphous region. At the stopping region of the implanted ions which is around Rp, an increase in the g-value was observed. It can be interpreted that strains caused by the stresses which the implanted ions exert on the surrounding lattice induce that effect.
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© 1973 Plenum Press, New York
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Matsumori, T., Kobayashi, T., Maekawa, H., Izumi, T. (1973). Strain Induced Effects on EPR Centers in Silicon Generated By P+ Ion Implantation. In: Crowder, B.L. (eds) Ion Implantation in Semiconductors and Other Materials. The IBM Research Symposia Series. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-2064-7_4
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DOI: https://doi.org/10.1007/978-1-4684-2064-7_4
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