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Lattice Disorder in Br, Cl, and F Implanted CdS — Optical Reflection Study

  • J. A. Hutchby
  • R. C. Webster
  • W. E. Miller
Part of the The IBM Research Symposia Series book series (IRSS)

Abstract

Optical reflection spectra (3.45 to 5.90 eV) are presented for CdS implanted with 40 keV Br, Cl, and F at fluences between 1 × 1014 and 1 × 1017 cm-2 and followed by isochronal anneals up to 500° C. Two reflection peaks located at 0.252 μm (E1:A) and 0.226 μm (E1:B) present in crystalline CdS decrease with increasing fluence. The ratio (E1:A/E1:B = r) of the two peaks is ion species dependent. The Fl and Cl implants increase r with fluence, whereas for Br implants r remains constant. For each species, the fractional change of reflectivity (ΔR/Ri) of E1:A increases linearly with log fluence for fluences less than 3 × 1015 cm-2. However, for fluences larger than 7 × 1015 cm-2, ΔR/Ri saturates for Br implants, but increases superlinearly for Cl and F implants. Comparison with similar channeling measurements (CM) indicates that ΔR/Ri provides a more sensitive measurement of disorder for low fluences. For fluences above saturation levels found in CM, the correlation ranges from good for Br and F implants to poor for Cl implants. In the latter case, comparison is complicated by errors introduced into the measurement of Peak E1:A caused by variations of r between samples implanted with equal fluences. By causing fluctuations in peak overlap, these variations of r also produce fluctuations in Peak E1:A, and suggest the use of only isolated peaks in reflection spectroscopic analyses of lattice disorder.

Isochronal anneal studies performed up to 500° C show a significant amount of disorder is removed between 200° C and 500° C for the F and Cl implants and between 200° C and 300° C for the Br implants. Also, all implants show a definite reverse anneal stage for temperatures less than 200° C. The correlation between reflection measurements and CM anneal data is fair for F and Cl implants and poor for the Br implants.

Keywords

Reflection Measurement Channel Measurement Reflection Peak Fractional Change Optical Reflection 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Plenum Press, New York 1973

Authors and Affiliations

  • J. A. Hutchby
    • 1
  • R. C. Webster
    • 1
  • W. E. Miller
    • 1
  1. 1.NASA Langley Research CenterHamptonUSA

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