Thermoluminescence and Related Experiments on Br-Implanted ZnS Single Crystals
The ultraviolet-excited thermoluminescence (TL) of Br-implanted ZnS single crystals has been measured between -200 and +300°C. The glow curves when compared with those obtained from pure ZnS crystals and crystals diffusion-doped with Br, show a Br-induced trap having a thermal activation energy of ~ 0.75 eV. Strong TL peaks near -100°C were common to all crystals. Samples from several batches of pure crystals were implanted at different times. The TL glow curves of all Br-implanted samples were very similar to each other. Detailed calculations of activation energies and frequency factors are shown. TL dosage curves and excitation spectra have been analyzed for the implanted samples. Shifts of the emission spectra between the “intrinsic” and Br traps are discussed. An annealing threshold of the implanted samples between 300 and 500°C has been found by TL measurements. The extent of damage to the crystal surface has been investigated by implanting similar ZnS crystals with Ar. Defect models are discussed.
KeywordsGlow Curve Glow Peak Pure Crystal Thermal Activation Energy Dosage Curve
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