Physical Profile Measurements in Insulating Layers Using the Ion Analyser
Ion analysing as a continuous profiling method is very versatile and powerful, provided some attention is given to operating conditions. In this paper, the experimental procedure will be described and typical results of implanted boron ion distributions in insulating layers presented. Attention will be focused on the shape of the profile compared with some theoretical calculations, showing the interest of this profiling technique in verifying theoretical hypothesis and for the adjustment of parameters. A correlation will also be made with results obtained using nuclear reactions.
KeywordsSilicon Nitride Nuclear Reaction Edgeworth Expansion Range Profile Nuclear Reaction Analysis
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