The Isothermal Annealing of Defects Created in Phosphorus Ion Doped Silicon by Additional Bombardment with Phosphorus Ions
A method permitting the sheet conductivity to be measured continuously during and after ion bombardment of ion doped silicon has been used to investigate the isothermal annealing of defects created in phosphorus ion doped silicon by additional bombardment with phosphorus ions. The investigation has been performed in the temperature region 36°C-164°C. At each temperature the anneling curve can be separated into several processes obeying first order kinetics. By plotting the process half-life versus reciprocal temperature information about the activation energies has been obtained.
At temperatures between 36°C and about 90°C the annealing is mainly governed by processes with activation energies about 0.65 eV. About 90°C activation energies near 1 eV are found. The results are discussed and compared with activation energies for known defects in silicon.
KeywordsActivation Energy Annealing Process Isothermal Annealing Vacancy Cluster Critical Dose
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- Å. Andersson, K-H. Eklund, and G. Swenson, to be published in Rad. Effects.Google Scholar
- A.C. Damask and G.J. Dienes, Point Defects in Metals (Gordon and Breach, London 1963).Google Scholar
- G. Carter and J.S. Collingon, Ion Bombardment of Solids (Heineman Educational Books Ltd, London 1968).Google Scholar
- K.L. Brower, Radiation Effects in Semiconductors, edited by J.W. Corbett and G.D. Watkins (Gordon and Breach, 1971) p. 189.Google Scholar
- Å. Andersson and K-H Eklund, GIPR-079 (1971).Google Scholar
- S.I. Tan and B.S. Berry, Proc. Int. Conf. on Ion Implantationin Semiconductors and other Matierials, Yorktown Heights (1972), paper 1:3.Google Scholar
- F.L. Vook, Proc. Int. Conf. on Defects in Semiconductors, Reading (1972), paper 7.Google Scholar
- A. Seeger, Proc. Int. Conf. on Defects in Semiconductors, Reading (1972), paper 30.Google Scholar
- R.R. Hasiguti and S. Ishino, Radiation Damage in Semiconductors, edited by M. Hulin, Dunod, Paris, 1964) p. 259.Google Scholar
- G. Carter, J.S. Colligon, W.A. Grant, and J.L. Whitton, Radiation Res. Rev. 3, 1 (1971).Google Scholar