The Isothermal Annealing of Defects Created in Phosphorus Ion Doped Silicon by Additional Bombardment with Phosphorus Ions

  • K.-H. Eklund
  • Å. Andersson
Part of the The IBM Research Symposia Series book series (IRSS)


A method permitting the sheet conductivity to be measured continuously during and after ion bombardment of ion doped silicon has been used to investigate the isothermal annealing of defects created in phosphorus ion doped silicon by additional bombardment with phosphorus ions. The investigation has been performed in the temperature region 36°C-164°C. At each temperature the anneling curve can be separated into several processes obeying first order kinetics. By plotting the process half-life versus reciprocal temperature information about the activation energies has been obtained.

At temperatures between 36°C and about 90°C the annealing is mainly governed by processes with activation energies about 0.65 eV. About 90°C activation energies near 1 eV are found. The results are discussed and compared with activation energies for known defects in silicon.


Activation Energy Annealing Process Isothermal Annealing Vacancy Cluster Critical Dose 
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Copyright information

© Plenum Press, New York 1973

Authors and Affiliations

  • K.-H. Eklund
    • 1
  • Å. Andersson
    • 1
  1. 1.Department of PhysicsChalmers University of TechnologyFack, Gothenburg 5Sweden

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