The Influence of the Amorphous Phase on Boron Atom Distributions in Ion Implanted Silicon

  • Billy L. Crowder
  • James F. Ziegler
  • George W. Cole
Part of the The IBM Research Symposia Series book series (IRSS)


The nuclear reaction, 10B(n, 4He)7, has been used to investigate the B depth distribution obtained by ion implantation into crystalline Si in a “random” direction and into amorphous Si produced by Si ion bombardment. The presence of the amorphous phase before B ion implantation has a pronounced effect on the B depth distribution (i.e. implantation into misaligned crystalline Si is not equivalent to implantation into amorphous Si). The presence of an amorphous phase has a marked effect on the amount of diffusional broadening of the B distribution during annealing at 900°C.


Amorphous Phase Depth Distribution Apparent Diffusion Constant Amorphous Surface Layer Continuous Amorphous Layer 


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Copyright information

© Plenum Press, New York 1973

Authors and Affiliations

  • Billy L. Crowder
    • 1
  • James F. Ziegler
    • 1
  • George W. Cole
    • 2
  1. 1.IBM Thomas J. Watson Research CenterYorktown HeightsUSA
  2. 2.Brookhaven National LaboratoryUptonUSA

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