Abstract
The computational procedure of Brice [8] is extended to permit computation of third central moments for the projected range distribution, using the LSS formulation of the range problem. Third central moments for B, P, As, and Sb in Si are computed for, initial energy in the range 20 keV to 1 MeV, and the results are compared with available experimental data. The agreement is considered to be very satisfactory.
This work was supported by the National Science Foundation.
This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
B.L. Crowder, J. Electrochem, Soc. 18, 943 (1971).
N.L. Johnson and S. Kotz, “Continuous Univariate Distributions, Vol II” Houghton-Mifflin, New York, 1970.
J.F. Gibbons and S. Mylroie, “Estimation of Impurity Profiles in Ion-Implanted Amorphous Targets Using Joined Half-Gaussian Distributions,” submitted to Appl. Phys. Letters for publication.
J. Lindhard, M. Scharff and H. Schlott, “Range Concepts and Heavy Ion Ranges,” Kgl. Danske Videnskab. Selskab., Matt. Fys, Medd. 33, No. 14, (1963).
J.B. Sanders, Can. J. Phys. 46, 455 (1968).
K.B. Winterbon, P. Sigmund, and J.B. Sanders, Kgl. Danske Widenskab. Selskab., Mat. Fys. Medd. 37, No. 14 (1970).
K.B. Winterbon, “Heavy Range Profiles and Associated Damage Distributions,” Rad. Effects 13, 215 (1972).
D.K. Brice, Rad. Effects 11, 227 (1971).
S. Mylroie, Stanford Electronics Laboratories Technical Report, to be published.
J.F. Gibbons, A. El-Hoshy, K.E. Manchester, and F.L. Vogel, Appl. Phys. Lett. 8 46, (Jan. 1966).
S.I. Furukawa, H. Matsumura, and H. Ishiwara, Proc. of U.S.-Japan Seminar on Ion Implantation in Semiconductors, Ed. S. Namba, Japan Society for the Promotion of Science 1972
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 1973 Plenum Press, New York
About this chapter
Cite this chapter
Mylroie, S., Gibbons, J.F. (1973). Computation of Third Central Moments for Projected Range Distributions of Common Ion-Implanted Dopants in Silicon. In: Crowder, B.L. (eds) Ion Implantation in Semiconductors and Other Materials. The IBM Research Symposia Series. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-2064-7_21
Download citation
DOI: https://doi.org/10.1007/978-1-4684-2064-7_21
Publisher Name: Springer, Boston, MA
Print ISBN: 978-1-4684-2066-1
Online ISBN: 978-1-4684-2064-7
eBook Packages: Springer Book Archive