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Computation of Third Central Moments for Projected Range Distributions of Common Ion-Implanted Dopants in Silicon

  • S. Mylroie
  • J. F. Gibbons
Part of the The IBM Research Symposia Series book series (IRSS)

Abstract

The computational procedure of Brice [8] is extended to permit computation of third central moments for the projected range distribution, using the LSS formulation of the range problem. Third central moments for B, P, As, and Sb in Si are computed for, initial energy in the range 20 keV to 1 MeV, and the results are compared with available experimental data. The agreement is considered to be very satisfactory.

Keywords

Initial Energy Central Moment High Order Moment Impurity Distribution Impurity Profile 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Plenum Press, New York 1973

Authors and Affiliations

  • S. Mylroie
    • 1
  • J. F. Gibbons
    • 1
  1. 1.Department of Electrical EngineeringStanford UniversityStanfordUSA

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