Si-SiO2 Interface States Induced by Implantation of Various Ion Species
Investigations were carried out on Si-SiO2 interface states induced by the implantation of He, B, N, O, Ne, AI, Si and P ions at the energy of 10 to 55 keV through 500–850 Å SiO2 film, to the doping level of less than 2 x 1012 ions/cm2. Density of induced charged interface state was proportional to the number of displaced atoms independent of the ion species implanted. Discrete energy levels around 0.4 eV from the conduction band edge was found in asimplanted samples. Annealing of these states occured 200-300°C range, with the activation energy of 0.3–0.4 eV.
KeywordsOxide Film Interface State Conduction Band Edge Interface State Density Single Vacancy
Unable to display preview. Download preview PDF.
- T. Warabisako, I. Yoshida and T. Tokuyama, Proc. 4th Conf. Solid State Devices, Tokyo (in press). Jour. Japan Soc. Appl. Phys. 42, suppl, 1973.Google Scholar
- A. Goetzerger and W. Fahner, Determination of Deep Levels in SiO2 by Combination of Ion Implantation and MOS Techniques, (oral paper) Solid State Device Res. Conf., 1972, Edmonton, Canada.Google Scholar
- T. Tokuyama, T. Warabisako and I. Yoshida, Proc. US-Japan Sem. on Ion Implantation in Semiconductors (Kyoto, Japan 1971) S. Namba Ed., Japan Soc. for the Promotion of Science 1971, p. 113.Google Scholar