Si-SiO2 Interface States Induced by Implantation of Various Ion Species

  • Takashi Tokuyama
  • Isao Yoshida
  • Terunori Warabisako
Part of the The IBM Research Symposia Series book series (IRSS)


Investigations were carried out on Si-SiO2 interface states induced by the implantation of He, B, N, O, Ne, AI, Si and P ions at the energy of 10 to 55 keV through 500–850 Å SiO2 film, to the doping level of less than 2 x 1012 ions/cm2. Density of induced charged interface state was proportional to the number of displaced atoms independent of the ion species implanted. Discrete energy levels around 0.4 eV from the conduction band edge was found in asimplanted samples. Annealing of these states occured 200-300°C range, with the activation energy of 0.3–0.4 eV.


Oxide Film Interface State Conduction Band Edge Interface State Density Single Vacancy 


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Copyright information

© Plenum Press, New York 1973

Authors and Affiliations

  • Takashi Tokuyama
    • 1
  • Isao Yoshida
    • 1
  • Terunori Warabisako
    • 1
  1. 1.Central Research LaboratoryHitachi Ltd.TokyoJapan

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