Channeling Analysis and Electrical Behavior of Boron Implanted Silicon

  • Youichi Akasaka
  • Kazuo Horie
Part of the The IBM Research Symposia Series book series (IRSS)


The depth distribution and the lattice location of boron atoms and their correlations with defects and effective carriers in heavily boron implanted silicon have been studied by means of channeling analysis and electrical measurements with a successive layer removal technique. The same set of crystals was used, which had been implanted with boron ions of 100 keV to doses of 1 x 1016/cm2 at room temperature. The 11B(p,α)8 Be reaction was utilized to obtain the boron distribution and to determine the lattice location of boron atoms. The angular dependences of the yields of the (p,α) reaction around the <111>, <110> and <100> axes were measured after annealing at 900°C with non-etched, 2950 Å etched, and 3750 Å etched samples. Main results obtained are the following: 1) Boron atoms which exceed the solubility limit, precipitate parallel to the <110> direction in the region of the highest concentration of boron atoms after annealing at 700-900°C. This is also confirmed by the facts that the distribution of the secondary defects coincides with that of boron and that the percentage of the electrically active boron is significantly lower around the boron ion range. 2) The boron distribution does not change significantly after annealing up to 900°C. A considerable diffusion of boron atoms was detected after annealing at 1000°C. In the temperature range from 900°C to 1000°C, the precipitated boron atoms are released and diffuse to become electrically active. 3) The depth distribution of boron atoms deviates from a gaussian. The projected ion range is approximately 20% shorter than the value calculated from the LSS theory.


Depth Distribution Boron Atom Lattice Location Secondary Defect Etched Sample 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.


  1. [1]
    J. A. Cairns, R. S. Nelson, J. S. Briggs, “Proceedings of the Second Int. Conf. in Ion Implantation on Semiconductors”, edited by I. Ruge and J. Graul (Springer-Verlag, Berlin, 1971), p. 299.CrossRefGoogle Scholar
  2. [2]
    W. S. Johnson, J. F. Gibbons, “LSS Projected Range Statistics in Semiconductors” (Stanford University Bookstore, Stanford, California, 1970).Google Scholar
  3. [3]
    T. E. Seidel, in Ref. 1, p. 47.Google Scholar
  4. [4]
    F. H. Eisen, B. Welch, J. E. Westmoreland, J. W. Mayer, “Atomic Collision Phenomena in Solids” (North Holland, 1970) p. 111.Google Scholar
  5. [5]
    J. Lindhard, M. Scharff, H. E. Schiøzitt, Mat. Fys. Medd. Dan. Vid. Selsk. 33 (No. 14), 1 (1963).Google Scholar
  6. [6]
    J. F. Ziegler, B. L. Crowder, G. W. Cole, J. E. E. Baglin, and B. J. Masters, Appl. Phys. Letters 21, 16 (1972).ADSCrossRefGoogle Scholar
  7. [7]
    J. C. North, W. M. Gibson, Radiat. Eff. 6, 199 (1970).ADSCrossRefGoogle Scholar
  8. [8]
    Y. Akasaka, K. Horie, K. Yoneda, T. Sakurai, H. Nishi, S. Kawabe, A. Tohi, J. Appl. Phys. (to be published in Jan. issue, 1973).Google Scholar
  9. [9]
    O. Beckamn, T. Huus, C. Zupancic, Phys. Rev. 91, 606 (1953).ADSCrossRefGoogle Scholar
  10. [10]
    E. Bøgh, Can. J. Phys. 46, 653 (1968).ADSCrossRefGoogle Scholar
  11. [11]
    L. C. Feldman, J. W. Rodgers, J. Appl. Phys. 41, 3776 (1970).ADSCrossRefGoogle Scholar
  12. [12]
    R. W. Bicknell, R. A. Allen, “Ion Implantation”, edited by F. H. Eisen and L. T. Chadderton (Gordon and Breach, 1971).Google Scholar

Copyright information

© Plenum Press, New York 1973

Authors and Affiliations

  • Youichi Akasaka
    • 1
  • Kazuo Horie
    • 1
  1. 1.Central Research Lab.Mitsubishi Electric Corp.Minamishimizu, Amagasaki, Hyogo 661Japan

Personalised recommendations