Abstract
Range distributions of 10 to 250 keV boron ions implanted into amorphous (predamaged) silicon have been determined using a recently developed secondary ion mass spectrometry technique. Due to the high experimental accuracy not only characteristic distribution parameters but also variations in the profile shape could be determined. Above about 40 keV deviations from Gaussian distributions were observed as a result of increasing electronic stopping.
The most probable projected ranges are in very good agreement with recent measurements of the distribution of electrical activity in randomly implanted single crystal silicon. From a comparison of experimental results with recent profile computation the electronic stopping cross section is found to be proportional to E0.4for energies E between 50 keV and 1.0 MeV.
The influence of annealing on the original range distribution has been investigated in the 40 keV case. Broadening of the as — implanted profiles was observed at temperatures necessary for recrystallization of the formerly amorphous silicon. This is attributed to enhanced diffusion. More pronounced broadening and tailing, however, has been reported for single crystal silicon.
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Wittmaack, K., Maul, J., Schulz, F. (1973). Energy Dependence and Annealing Behaviour of Boron Range Distributions in Silicon. In: Crowder, B.L. (eds) Ion Implantation in Semiconductors and Other Materials. The IBM Research Symposia Series. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-2064-7_12
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DOI: https://doi.org/10.1007/978-1-4684-2064-7_12
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