Advertisement

Concentration Profiles of Arsenic Implanted in Silicon

  • M. Iwaki
  • K. Gamo
  • K. Masuda
  • S. Namba
  • S. Ishihara
  • I. Kimura
Part of the The IBM Research Symposia Series book series (IRSS)

Abstract

Concentration profiles of 35 to 130KeV arsenic ions have been measured by means of neutron-activation analysis. The profiles are composed of two parts; one of nearly gaussian shape around the peak concentration region and the other of the nearly exponential shape at the deeper region beyond the peak. The nearly gaussian components agree with the prediction by the LSS theory. The exponential shape was not observed in heavily damaged silicon. The slope of the exponential tail is independent of a dose, substrate temperature and ion energy. It is proposed that this tail is caused by a rapid diffusion process such as interstitial diffusion.

Keywords

Concentration Profile Interstitial Atom Trap Density Exponential Tail Interstitial Diffusion 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. 1).
    J. Lindhard, M. Scharff and H.E. Schiott; kgl. Danske Videnskab. Selskab. Mat. Fys. Medd. 33 (1963) 14.Google Scholar
  2. 2).
    O.J. Marsh, R. Baron, and G.A. Shifring; Appl. Phys. Letters: 13 (1968) 199 fADSCrossRefGoogle Scholar
  3. 3).
    R.A. Moline: J. Appl. Phys. 42 (1971) 3553.ADSCrossRefGoogle Scholar
  4. 4).
    G. Dearnaley, M.A. Wilkins, P.D. Goods, J.H. Freeman, and G.A. Gard: in Atomic collision Phenomena in Solids, edited by F D.W. Palmer, M.W. Thompson, and P.D. Townsend (American Elsevier, New York, 1970), p.633Google Scholar
  5. 5).
    K. Gamo, K. Iwaki, K. Masuda, S. Namba, S. Ishihara, and I. Kimura: Proc. 2nd Intern. Conf. on Ion Implantation in Semiconductors, Garmish-Partenkichen, 1971, p.459CrossRefGoogle Scholar
  6. 6).
    S. Namba, K. Masuda, K. Gamo, K. Iwaki: Proc. U.S.-Japan Seminar on Ion Implantation, Kyoto, 1971 p.49Google Scholar
  7. 7).
    J.M. Fairfield and B.L. Crowder: Trans. Met. Soc. AIME 245 (1969) 469Google Scholar
  8. 8).
    D.K. Brice: Radiation Effects 6 (1970) 77 and private f-commimicationADSCrossRefGoogle Scholar
  9. 9).
    S J.A. Davies and P. Jespersgaard: Can. J. Phys. 44, (1966) 1631.ADSCrossRefGoogle Scholar
  10. 10).
    J.W. Mayer, L. Eriksson, and J.A. Davies, “ion Implantation in Semiconductors,” Chapt. 2, Academic Press, New York (1970)Google Scholar
  11. 11).
    Dearnaley, J.H. Freeman, G.A. Gard and M.A. Wilkins: Can. J. Phys. 46 (1968) 587fADSCrossRefGoogle Scholar

Copyright information

© Plenum Press, New York 1973

Authors and Affiliations

  • M. Iwaki
    • 1
  • K. Gamo
    • 1
  • K. Masuda
    • 1
  • S. Namba
    • 1
  • S. Ishihara
    • 2
  • I. Kimura
    • 2
  1. 1.Faculty of Engineering ScienceOsaka UniversityToyonaka, OsakaJapan
  2. 2.Research Reactor InstituteKyoto UniversityKumatori, Sennan-Gun, OsakaJapan

Personalised recommendations