Concentration Profiles of Arsenic Implanted in Silicon
Concentration profiles of 35 to 130KeV arsenic ions have been measured by means of neutron-activation analysis. The profiles are composed of two parts; one of nearly gaussian shape around the peak concentration region and the other of the nearly exponential shape at the deeper region beyond the peak. The nearly gaussian components agree with the prediction by the LSS theory. The exponential shape was not observed in heavily damaged silicon. The slope of the exponential tail is independent of a dose, substrate temperature and ion energy. It is proposed that this tail is caused by a rapid diffusion process such as interstitial diffusion.
KeywordsConcentration Profile Interstitial Atom Trap Density Exponential Tail Interstitial Diffusion
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