Polarized Luminescence of Semiconductors Due to Optical Orientation of Electrons

  • R. I. Gioev
  • B. P. Zakharchenya
  • V. G. Fleisher
Conference paper


Several physical phenomena are studied using measurements of the degree of circular polarization of recombination radiation in semiconductors during excitation by circularly polarized photons with energies corresponding to interband transitions. The effects of an external magnetic field are investigated. Experimental results are presented for optical orientation in GaAs crystals and In solid solutions GaAs-AlAs and GaAs-GaP. Lifetimes and spin relaxation times of non-equilibrium carriers in the 10−10 to 10−11 sec range are measured.


Circular Polarization Spin Relaxation Recombination Radiation Optical Orientation Transverse Magnetic Field 
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Copyright information

© Plenum Press, New York 1973

Authors and Affiliations

  • R. I. Gioev
    • 1
  • B. P. Zakharchenya
    • 1
  • V. G. Fleisher
    • 1
  1. 1.Physico-Technical InstituteAcademy of SciencesLeningradUSSR

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