Polarized Luminescence of Semiconductors Due to Optical Orientation of Electrons
Several physical phenomena are studied using measurements of the degree of circular polarization of recombination radiation in semiconductors during excitation by circularly polarized photons with energies corresponding to interband transitions. The effects of an external magnetic field are investigated. Experimental results are presented for optical orientation in GaAs crystals and In solid solutions GaAs-AlAs and GaAs-GaP. Lifetimes and spin relaxation times of non-equilibrium carriers in the 10−10 to 10−11 sec range are measured.
KeywordsCircular Polarization Spin Relaxation Recombination Radiation Optical Orientation Transverse Magnetic Field
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