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Characterization of Defects in GaAs by Photoluminescence Measurements

  • E. Fabre
Conference paper

Abstract

Photoluminescence measurements at 4.2 K have been applied to the characterization of defects in gallium arsenide, either in bulk or in epitaxial material. This paper deals with a particular acceptor center: the gallium vacancy-donor complex. The interactions of this defect with dislocations on the one hand, and with copper on the other, are investigated and discussed.

Keywords

Epitaxial Layer Photoluminescence Spectrum Gallium Arsenide Dislocation Line Photoluminescence Measurement 
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Copyright information

© Plenum Press, New York 1973

Authors and Affiliations

  • E. Fabre
    • 1
  1. 1.Laboratories d’Electronique et de Physique AppliqueeLimeil-BrévannesFrance

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