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Electroluminescence in GaN

  • J. I. Pankove
  • E. A. Miller
  • J. E. Berkeyheiser
Conference paper

Abstract

Light-emitting diodes of GaN have been made, which can generate CW light over any portion of the visible spectrum and in the near ultraviolet. External power efficiencies of the order of 10−4 can be obtained at room temperature. Annealing treatments of Zn-doped insulating GaN greatly increase the emission efficiency.

Keywords

Nitrogen Vacancy Electric Power Input 3850A Versus 3780A Electro Luminescence Single Crystal Layer 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. 1.
    H. P. Maruska and J. J. Tietjen, Appl. Phys. Lett. 15, 327 (1969).ADSCrossRefGoogle Scholar
  2. 2.
    J. I. Pankove, E. A. Miller, and J. E. Berkeyheiser, to be published.Google Scholar
  3. 3.
    J. I. Pankove, E. A. Miller, and J. E. Berkeyheiser, RCA Review 32, 383 (1971)Google Scholar
  4. 4.
    J. I. Pankove, E. A. Miller, and J. E. Berkeyheiser, J. Luminescence 5, 84 (1972).ADSCrossRefGoogle Scholar
  5. 5.
    M. A. Lampert and P. Mark, “Current Injection in Solids,” Academic Press (1970).Google Scholar
  6. 6.
    J. I. Pankove and P. E. Norris, RCA Review (in press).Google Scholar
  7. 7.
    J. I. Pankove, J. Electrochemical Soc. (in press).Google Scholar

Copyright information

© Plenum Press, New York 1973

Authors and Affiliations

  • J. I. Pankove
    • 1
  • E. A. Miller
    • 1
  • J. E. Berkeyheiser
    • 1
  1. 1.RCA LaboratoriesPrincetonUSA

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