Donor-Double Acceptor Luminescence of Zinc Telluride
Using a pulsed electron beam from a Van de Graaff accelerator, time resolved spectroscopy measurements at ~ 10K have been performed on the four broad band emissions occurring in zinc telluride at 531.4, 533.4, 551.9 and 553.9 nm and designated AI, AII, BI and BII respectively. These measurements have confirmed the assignment of the AI and BI emissions to free-to-bound transitions and the AII and BII emissions to bound-to-bound transitions. The data also permit an estimate of the donor depth as ~ 31 meV. Heat treatment studies and doping with various impurities have shown that enhancement of the bound-to-bound emissions is produced by phosphorus doping. The two acceptor levels are believed to result from the first and second ionized states of the zinc vacancy.
KeywordsExcitation Intensity Pulse Electron Beam Acceptor Centre Zinc Vacancy Zinc Telluride
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