An Injection Type Electro-Luminescence in ZnSe-Sno2 Hetero-Junction
Injection type electro-luminescence has been observed in the forward biased ZnSe-SnO2 heterostructure junction. The junction shows good rectification characteristics. Clearly separated four main emission bands are found at energies of 2.00, 2.35, 2.70 and 2.80 eV at 90 K. Emission light intensity has almost no frequency dependence from DC up to 10 KHz. Injection current and temperature dependence of the emission spectra are demonstrated. The C-V characteristic and the spectral response of photovoltaic effects are also measured to determine the potential profile of the junction.
KeywordsLight Emit Diode Potential Profile Photovoltaic Effect ZnSe Crystal Sn02 Layer
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