Exciton Luminescence and Photoconductivity in Highly Excited GaP

  • A. Nakamura
  • K. Morigaki


This paper is concerned with excitonic processes at low temperatures in GaP. We present direct evidence for the non-radiative Auger process of bound exciton annihilation. Additionally, problems relating to the behavior of exciton luminescence and photoconductivity under intense excitation corresponding to the band-to-band transition in undoped or Te-doped GaP are examined.


Conduction Electron Laser Light Excitation Intensity Free Exciton Free Hole 
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Copyright information

© Plenum Press, New York 1973

Authors and Affiliations

  • A. Nakamura
    • 1
  • K. Morigaki
    • 1
  1. 1.Institute for Solid State PhysicsUniversity of TokyoRoppongi, TokyoJapan

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