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Exciton Luminescence and Photoconductivity in Highly Excited GaP

  • A. Nakamura
  • K. Morigaki

Abstract

This paper is concerned with excitonic processes at low temperatures in GaP. We present direct evidence for the non-radiative Auger process of bound exciton annihilation. Additionally, problems relating to the behavior of exciton luminescence and photoconductivity under intense excitation corresponding to the band-to-band transition in undoped or Te-doped GaP are examined.

Keywords

Conduction Electron Laser Light Excitation Intensity Free Exciton Free Hole 
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References

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    D. F. Nelson, J. D. Cuthbert, P. J. Dean and D. G. Thomas Phys. Rev. Lett. 17, 1262 (1966).ADSCrossRefGoogle Scholar
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    D. G. Thomas, M. Gershenzon and J. J. Hopfield, Phys. Rev. 131, 2397 (1963).ADSCrossRefGoogle Scholar
  3. 3.
    A. Nakamura and K. Morigaki, Tech. Rep. of ISSP, Ser. A No. 524, 1972.Google Scholar

Copyright information

© Plenum Press, New York 1973

Authors and Affiliations

  • A. Nakamura
    • 1
  • K. Morigaki
    • 1
  1. 1.Institute for Solid State PhysicsUniversity of TokyoRoppongi, TokyoJapan

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