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Electronic Structure of Amorphous Semiconductors

  • D. Weaire
  • M. F. Thorpe
Conference paper
Part of the The IBM Research Symposia Series book series (IRSS)

Abstract

Until very recently, amorphous solids were a good deal more common in nature than in solid state theory textbooks. This can be only partially excused on the grounds that they are embarrassingly difficult substances to analyse theoretically in any fundamental way. The lack of periodicity (and hence Bloch’s Theorem) presents severe obstacles to the formulation of a theory that is at once fundamental, rigorous, realistic and tractable. One must always hope for the last of these qualities but the other three can hardly be attained simultaneously, so the problem must necessarily be investigated from different (complementary rather than competing) points of view, each of which has its own particular merits. We shall review these briefly in the next section, before embarking on an exposition of our own recent efforts. However it is first necessary to say something about structure. This obvious first step in the description of a solid is, in the case of amorphous solids, still a rather hesitant and uncertain one. While many of the remarks which we shall make are of wide validity, it is appropriate at this point to define our field of immediate interest as being confined to the very simplest amorphous semiconductors, namely Si, Ge and related compounds.

Keywords

Band Structure Amorphous Semiconductor Root Edge Random Network Model Topological Disorder 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Plenum Press, New York 1973

Authors and Affiliations

  • D. Weaire
    • 1
  • M. F. Thorpe
    • 1
  1. 1.Becton CenterYale UniversityNew HavenUSA

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