Localized Defects in Semiconductors

  • F. L. Vook
  • K. L. Brower
Conference paper
Part of the The IBM Research Symposia Series book series (IRSS)


Recent progress in experimental and theoretical studies of localized defects in semiconductors is reviewed. Most of the present information on localized defects has been obtained from electron paramagnetic resonance and optical absorption measurements. In addition, new innovative experimental approaches, such as isotopic ion implantation, ion implantation damage production, depth distribution measurements of specific defects, and channeling techniques, are contributing greatly to current progress in understanding defects. Computational studies which complement the experimental studies are also discussed.


Electron Paramagnetic Resonance Localize Defect Electron Paramagnetic Resonance Measurement Electron Paramagnetic Resonance Study Triplet Spin State 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.


  1. 1.
    Recent reviews of defects in semiconductors are given in Refs. 2–7.Google Scholar
  2. 2.
    Radiation Damage in Semiconductors, edited by P. Baruch (Dunod, Paris, 1965).Google Scholar
  3. 3.
    J. W. Corbett, Electron Radiation Damage in Semiconductors and Metals ( Academic Press, New York, 1966 ).Google Scholar
  4. 4.
    k. Radiation Effects in Semiconductors, edited by F. L. Vook ( Plenum Press, New York, 1960 ).Google Scholar
  5. 5.
    Radiation Effects in Semiconductors, edited by J, W. Corbett and G. D. Watkins (Gordon and Breach, New York, 1971).Google Scholar
  6. 6C.
    H. J. Stein, Rad. Effects 9, 195 (1971).CrossRefGoogle Scholar
  7. 7.
    J. W. Corbett and J. C. Bourgoin, IEEE Trans. Nucl., Sci. NS-18, 11 (1971).Google Scholar
  8. 8.
    G. D. Watkins, p. 67 of Ref. k.Google Scholar
  9. 9.
    G. D. Watkins and J. W. Corbett, Phys. Rev. 121, 1001 (1961); 134, A1359 (196U); 138, A543 (1965); 138, A555 (1965).CrossRefGoogle Scholar
  10. 10.
    G. D. Watkins, J. Phys. Soc. Japan 18, Suppl. II, p. 22 (1963); p. 97, Ref. 2; Phys. Rev. 155, 802 (1967).CrossRefGoogle Scholar
  11. 11.
    L. J. Cheng, Je C. Corelli, J. W. Corbett, and G. D. Watkins, Phys. Rev. 152, 761 (1966); C. S. Chen, J. C. Corelli, and G. D. Watkins, Bull. Am. Phys. Soc. 14, 395 (1969); C. S. Chen and J. C. Corelli, Phys. Rev. B 5, 1505 (1972); Rad. Effects 9, 75 (1971); L. J. Cheng and P. Vajda, Phys. Rev. 186, 816 (1969).CrossRefGoogle Scholar
  12. 12.
    H. J. Hrostowski and R. H. Kaiser, Phys. Rev. 107, 966 (1957); J. Phys. Chem. Solids 2l4 (1959).CrossRefGoogle Scholar
  13. 13.
    J. W. Corbett, G. D. Watkins, R. M. Chrenko, and R. S. McDonald, Phys. Rev. 121, 1015 (1961).CrossRefGoogle Scholar
  14. 14.
    R. E. Whan, Phys. Rev. 140, A690 (1965).CrossRefGoogle Scholar
  15. 15.
    J. W. Mayer, L. Eriksson, and J. A. Davies, Ion Implantation in Semiconductors ( Academic Press, New York, 1970 ).Google Scholar
  16. 16.
    Ion Implantation, edited by F. H. Eisen and L. T. Chadderton (Gordon and Breach, New York, 1971).Google Scholar
  17. 17.
    Ion Implantation in Semiconductors, edited by I. Ruge and J. Grani (Springer-Verlag, Berlin, 1971).Google Scholar
  18. 18.
    K. L. Brower, Phys. Rev. B 5, 4274 (1972).CrossRefGoogle Scholar
  19. 19.
    K. L. Brover, Phys. Rev. B 4, 1968 (1971).CrossRefGoogle Scholar
  20. 20.
    K. L. Brower, Rad. Effects 8, 213 (1971).CrossRefGoogle Scholar
  21. 21.
    Y. Mo Kim and J. W. Corbett (to be published).Google Scholar
  22. 22.
    A. Kahan, F. Euler, T. Whatley, and W. G. Spitzer, Bull. Am. Phys. Soc. 17, 27 (1972).Google Scholar
  23. 23.
    H. J. Stein, Bull. Am. Phys. Soc. 17, 154 (1972).Google Scholar
  24. 2b.
    H. J. Stein, P. L. Vook, D. K. Brice, J. A. Borders, and S. T. Picraux, Rad. Effects 6, 19 (1970).CrossRefGoogle Scholar
  25. 25.
    H. J. Stein and W. Beezhold, Appi. Phys. Lett. 17, 442 (1970).CrossRefGoogle Scholar
  26. 26.
    K. L. Brower and W. Beezhold, J. Appi. Phys. 43, 3499 (1972).CrossRefGoogle Scholar
  27. 27.
    K. L. Brower, F. L. Vook, and J. A. Borders, Appl. Phys. Lett. 16, 108 (1970).CrossRefGoogle Scholar
  28. 28.
    H. J. Stein, F. L. Vook, and J. A. Borders, Appl. Phys. Lett. 16, 106 (1970).CrossRefGoogle Scholar
  29. 29.
    D. K. Brice, Appl. Phys. Lett. 16, 103 (1970); Rad. Effects 6, 77 (1970); Rad. Effects 11, 227 (1971).Google Scholar
  30. 30.
    G. W. Arnold and F. L. Vook, Rad. Effects 14, 15 7 (1972).Google Scholar
  31. 31.
    J. Lindhard, M. Scharff, and Hc Ec Schiott, Kgl. Danske Videnskab Selskab, Mat. Fys. Medd. 33, No. 14 (1963).Google Scholar
  32. 32.
    Proc. Intl. Conf. on Atomic Collisions in Solids, Gausdal, Norway, Sept. 1971 ( Gordon and Breach, to be published).Google Scholar
  33. 33.
    S. T. Picraux, W. L. Brown, and W. M. Gibson, Phys. Rev. B 6, 1382 (1972).CrossRefGoogle Scholar
  34. 34.
    J. U. Andersen, O. Andreasen, J. A. Davies, and E. Uggerhøj, Rad. Effects 7, 25 (1971); or Hef. 16, p. 315.CrossRefGoogle Scholar
  35. 35.
    B. Domeij, G. Fladda, and N. G. E. Johansson, Rad. Effects 6, 155 (1970); or Ref. 16, p. 425.CrossRefGoogle Scholar
  36. 36.
    L. Eriksson, J. A. Davies, N. G. E. Johansson, and JQ W. Mayer, J. Appl. Phys. 40, 842 (1969).CrossRefGoogle Scholar
  37. 37.
    O. Meyer, N. G. E. Johansson, S. T. Picraux, and J. W. Mayer, Solid State Comm. 8, 529 (1970).CrossRefGoogle Scholar
  38. 38.
    J. C. North and W. M. Gibson, Appl. Phys. Lett. 16, 126 (1970).CrossRefGoogle Scholar
  39. 39.
    J. D. Watkins, Radiation Effects on Semiconductor Components (journies DTElectronique, Toulouse, France, 1967 ), Vol. I, A1.Google Scholar
  40. 40.
    G. D. Watkins, TEEE Trans. Nucl. Sci. NS-16, 13 (Dec. 1969); also p. 97 of Ref. 2.CrossRefGoogle Scholar
  41. 41.
    K. L. Brower, Phys. Rev. B 1, 1908 (1970).CrossRefGoogle Scholar
  42. 42.
    G. W. Ludwig and H. H. Woodbury, Solid State Physics, edited by F. Seitz and D. Turnbull (Academic Press, New York, 1962), Vol. 13, p. 223.Google Scholar

Copyright information

© Plenum Press, New York 1973

Authors and Affiliations

  • F. L. Vook
    • 1
  • K. L. Brower
    • 1
  1. 1.Sandia LaboratoriesAlbuquerqueUSA

Personalised recommendations