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LCAO-MO Cluster Model for Localized States in Covalent Solids

  • G. D. Watkins
  • R. P. Messmer
Part of the The IBM Research Symposia Series book series (IRSS)

Abstract

In this contribution we will be concerned with a theoretical description of the effect of isolated defects and impurities in an otherwise perfect crystalline covalent solid. One of the main effects of the defect or impurity is to create localized electronic states about itself as distinguished from the delocalized Bloch states which extend throughout the perfect crystal. These localized states have associated with them, energy levels in the gap between the valence and conduction bands (in “band language”) or in the gap between the bonding and anti-bonding orbital s of the solid (in “bond language”).

Keywords

Band Structure Calculation Valence Band Edge Lattice Vacancy Localize Electronic State Finite Cluster 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. 1.
    W. Kohn, in Solid State Physics, edited by F. Seitz and D. Turnbull (Academic Press Inc., N.Y. 1957) Vol. 5, p. 258.Google Scholar
  2. 2.
    G. D. Watkins, in Radiation Effects in Semiconductors, edited by F. L. Vook, ( Plenum Press, N.Y., 1968 ), p. 67.Google Scholar
  3. 3.
    G. F. Köster and J. C. Slater, Phys. Rev. 95, 1167; ibid. 96, 1208 (1954).CrossRefGoogle Scholar
  4. 4.
    J.Callaway and A. J. Hughes, Phys. Rev. 156, 860 (1967).CrossRefGoogle Scholar
  5. 5.
    N. J. Parada, Phys. Rev. B3, 2042 (1971).Google Scholar
  6. 6.
    R. Hoffmann, J. Chem. Phys. 39, 1397 (1963).CrossRefGoogle Scholar
  7. 7.
    M. Zerner, contribution to this symposium.Google Scholar
  8. 8.
    J. C. Slater, Phys. Rev. 36, 57 (1930).CrossRefGoogle Scholar
  9. 9.
    R. P. Messmer and G. D. Watkins, Phys. Rev. Letters 25, 656 (1970).CrossRefGoogle Scholar
  10. 10.
    R. P. Messmer and G. D. Watkins, Radiation Effects 9, 9 (1971).CrossRefGoogle Scholar
  11. 11.
    G. D. Watkins, R. P. Messmer, C. Weigel, D. Peak, and J. W. Corbett, Phys. Rev. Letters 27, 1573 (1971).CrossRefGoogle Scholar
  12. 12.
    R. P. Messmer and G. D. Watkins, Phys. Rev. B, submitted for publication.Google Scholar
  13. 13.
    G. D. Watkins, J. Phys. Soc. Japan 18, Suppl. II, 22 (1963).CrossRefGoogle Scholar
  14. 14.
    G. D. Watkins, in Radiation Damage in Semiconductors ( Dunod, Paris, 1965 ), p. 97.Google Scholar
  15. 15.
    T. Yamaguchi, J. Phys. Soc. Japan 18, 386, 923 (1963).Google Scholar
  16. 16.
    K. H. Bennemann, Phys. Rev. 137, A1497 (1965); 139, A482 (1965).CrossRefGoogle Scholar
  17. 17.
    R. R. Hasiguti, J. Phys. Soc. Japan 21, 1927 (1966).CrossRefGoogle Scholar
  18. 18.
    S. P. Singhal, Phys. Rev. B4, 2497 (1971).CrossRefGoogle Scholar
  19. 19.
    K. Schroeder, Bull. Amer. Phys. Soc. 16, 397 (1971).Google Scholar
  20. 20.
    G. D. Watkins and R. P. Messmer, Phys. Rev. B4, 2066 (1971).Google Scholar
  21. 21.
    R. P. Messmer, Chem. Phys. Letters 11, 589 (1971).CrossRefGoogle Scholar
  22. 22.
    F. Herman, R. L. Kortum, and C. D. Kuglin, Intern. J. Quantum Chem. 1S, 533 (1967).CrossRefGoogle Scholar
  23. 23.
    R. P. Messmer, B. McCarroll and C. M. Singal, J. Vacuum Sci. Technol. 9, 891 (1972).CrossRefGoogle Scholar
  24. 24.
    R. P. Messmer and G. D. Watkins, to be published.Google Scholar
  25. 25.
    K. H. Johnson and J. W. D. Connolly, contribution to this symposium.Google Scholar

Copyright information

© Plenum Press, New York 1973

Authors and Affiliations

  • G. D. Watkins
    • 1
  • R. P. Messmer
    • 1
  1. 1.General Electric Corporate Research and DevelopmentSchenectadyUSA

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