Spatial Dispersion Induced Birefringence in Cubic Semiconductors
A procedure to calculate the lowest order spatial dispersion effects in the dielectric constant of a germanium-type semiconductor is presented. The contribution of the lowest direct edge (E0 E0 +A0), the E1 – E1 + Δ1 edge, and the Penn gap is given. These results are used to estimate the birefringence for light propagation along . Good agreement with recent experimental results for Ge, GaAs, and Si is found.
KeywordsDielectric Constant Brillouin Zone Spatial Dispersion Penn Model Indirect Exciton
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