Abstract
The study of effects of stress on interband tunneling in semiconductors has added to our understanding of both the tunneling process and the semiconductor materials. The same degree of success is not to be expected for the case of metal-insulator-metal tunneling. In order to appreciate the difference between metal and semiconductor tunneling, a few important factors governing interband tunneling in semiconductors should be pointed out.
Work supported by the U.S. Air Force Office of Scientific Research, AFOSR 49(638)-1653.
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© 1969 Plenum Press
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Fritzsche, H. (1969). Effect of Stress on Interband Tunneling in Semiconductors. In: Burstein, E., Lundqvist, S. (eds) Tunneling Phenomena in Solids. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-1752-4_12
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DOI: https://doi.org/10.1007/978-1-4684-1752-4_12
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