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Morphology of Autoepitaxial Gallium Arsenide in the Crystallographic Range (111)A-( 100)-( 111 )B

  • L. G. Lavrent’eva
  • M. P. Yakubenya
  • O. M. Ivleva
  • V. A. Moskovkin

Abstract

It is usual [1] to examine the morphology of autoepitaxial films of gallium arsenide by use of substrates whose surfaces are singular planes.* On the other hand, it is well-known that vicinal surfaces often give layers with smoother vicinal planes often give layers with smoother surfaces, as for silicon [3], germanium [4], and gallium arenide [5, 6]. The only published description of the morphology of gallium arsenide layers on substrates of orientation (112) and (113) is [7], where layers 0.5–0.8 mm thick were used. On the other hand, planes of orientation {hkk} have recently aroused interest in connection with the scope for making films with low carrier concentrations but high mobilities [8].

Keywords

Gallium Arsenide Vicinal Surface Growth Figure Growth Pyramid Singular Plane 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Consultants Bureau, New York 1975

Authors and Affiliations

  • L. G. Lavrent’eva
  • M. P. Yakubenya
  • O. M. Ivleva
  • V. A. Moskovkin

There are no affiliations available

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