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GaAs on InP Based Optoelectronic Integrated Circuits for Optical Switching Networks

  • A. Ackaert
  • I. Pollentier
  • P. Demeester
  • P. Van Daele
  • D. Rondi
  • G. Glastre
  • A. Enard
  • R. Blondeau
  • P. Jarry
  • J. Cavaillès
  • M. Renaudt
  • H. Angenent
Part of the NATO ASI Series book series (NSSB, volume 253)

Abstract

For the fabrication of long wavelength OptoElectronic Integrated Circuits (OEICs) there is a strong tendency towards the integration of InP/InGaAsP based optical and electronic components. The problems encountered due to the immature InPrelated technology for the fabrication of electronic devices are mainly due to the low Schottky barrier on InP materials. This makes it impossible to use the classical Metal Semiconductor Field Effect Transistor (MESFET) structures, which are well developed in the GaAs technology. Alternatively, more complex structures, such as Metal Insulator Semiconductor FETs (MISFET), Junction FETs (JFET) and Heterostructure Bipolar Transistors (HBT) are used.

Keywords

Ridge Waveguide GaAs Buffer Layer Active Waveguide Thin GaAs Heterostructure Bipolar Transistor 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Plenum Press, New York 1991

Authors and Affiliations

  • A. Ackaert
    • 1
  • I. Pollentier
    • 1
  • P. Demeester
    • 1
  • P. Van Daele
    • 1
  • D. Rondi
    • 2
  • G. Glastre
    • 2
  • A. Enard
    • 2
  • R. Blondeau
    • 2
  • P. Jarry
    • 3
  • J. Cavaillès
    • 3
  • M. Renaudt
    • 3
  • H. Angenent
    • 3
  1. 1.University of Gent (LEA) — IMECGentBelgium
  2. 2.Thomson CSF/LCR, Domaine de CorbevilleOrsayFrance
  3. 3.LEPLimeil Brevannes CxFrance

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