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Strained Layer Lasers in the InGaAs/GaAs/AlGaAs Heterostructure System

  • H. Morkoç
Part of the NATO ASI Series book series (NSSB, volume 253)

Abstract

Recent developments in the technology and fundamentals of strained layer epitaxial systems have generated overwhelming interest in the exploitation of such heterostructures for optical and electronic device applications. This is in part due to the additional degrees of freedom provided for device structures to be tailored for the particular application and in many cases improved performance over what is possible with the lattice matched systems alone. For example, quantum well lasers with strained InGaAs active layers have achieved threshold currents comparable to those with GaAs channels but with much less edge losses due to the smaller surface recombination velocity in InGaAs and very stable power outputs. Reduced threshold currents and increased differential gains are expected to lead to modulation at higher frequencies.

Keywords

Valence Band Heavy Hole Light Hole Valence Band Edge Threshold Current Density 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Plenum Press, New York 1991

Authors and Affiliations

  • H. Morkoç
    • 1
  1. 1.Coordinated Science Laboratory and Materials Research LaboratoryUniversity of IllinoisUrbanaUSA

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