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Heterojunction Band Discontinuities for Pseudomorphically Strained InxGa1 - xAs/AlyGa1 - yAs Heterointerfaces

  • D. J. Arent
  • C. Van Hoof
  • G. Borghs
  • H. P. Meier
Part of the NATO ASI Series book series (NSSB, volume 253)

Abstract

A general description is presented for calculating the strain-induced variations in the band edge discontinuities for pseudomorphically strained III–V heterointerfaces grown in the (100) direction. InxGal-xAs/AlyGal-yAs ternary/ternary heterointerfaces are specifically treated within the virtual crystal approximation, accounting for band parabolicity and composition dependent material parameters. In conjunction with the development of an equation describing the strained InxGal-xAs band gap as a function of In concentration, the conduction band offset ratios, calculated as a function of both In and Al content, are shown to be nonconstant and are in very good agreement with experimental data derived from strained single quantum well samples grown by molecular beam epitaxy and analyzed using room temperature photoreflectance spectroscopy and data from the literature.

Keywords

Valence Band Valence Band Maximum InGaAs Layer Band Discontinuity Virtual Crystal Approximation 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Plenum Press, New York 1991

Authors and Affiliations

  • D. J. Arent
    • 1
  • C. Van Hoof
    • 2
  • G. Borghs
    • 2
  • H. P. Meier
    • 1
  1. 1.IBM Research DivisionZurich Research LaboratoryRüschlikonSwitzerland
  2. 2.Interuniversity Microelectronics Center (IMEC) Kapeldreef 75LeuvenBelgium

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