Heterojunction Band Discontinuities for Pseudomorphically Strained InxGa1 - xAs/AlyGa1 - yAs Heterointerfaces
A general description is presented for calculating the strain-induced variations in the band edge discontinuities for pseudomorphically strained III–V heterointerfaces grown in the (100) direction. InxGal-xAs/AlyGal-yAs ternary/ternary heterointerfaces are specifically treated within the virtual crystal approximation, accounting for band parabolicity and composition dependent material parameters. In conjunction with the development of an equation describing the strained InxGal-xAs band gap as a function of In concentration, the conduction band offset ratios, calculated as a function of both In and Al content, are shown to be nonconstant and are in very good agreement with experimental data derived from strained single quantum well samples grown by molecular beam epitaxy and analyzed using room temperature photoreflectance spectroscopy and data from the literature.
KeywordsValence Band Valence Band Maximum InGaAs Layer Band Discontinuity Virtual Crystal Approximation
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