Magnetospectroscopy of MOCVD Grown GaInSb/Gasb Strained Layer Quantum Wells

  • G. Rees
  • S. K. Haywood
  • R. W. Martin
  • N. J. Mason
  • R. J. Nicholas
  • G. M. Sundaram
  • P. J. Walker
  • R. J. Warburton
Part of the NATO ASI Series book series (NSSB, volume 253)


Biaxial strain in a pseudomorphically grown heterostructure provides a further item in the toolkit of the band structure engineer, complementing alloying and quantum confinement. It is a valuable asset for constructing new materials offering improved optoelectronic device performance. Modeling and design of devices is an important step[1–4] in the fabrication process and demands a knowledge of these factors of strain, confinement and material composition on electronic structure. The effective Hamiltonian provides an economical and accurate means of describing band structure for device modeling purposes which automatically includes simplifications due to symmetry.


Landau Level Quantum Confinement Heavy Hole Biaxial Strain Luttinger Parameter 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


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Copyright information

© Plenum Press, New York 1991

Authors and Affiliations

  • G. Rees
    • 1
    • 2
  • S. K. Haywood
    • 1
  • R. W. Martin
    • 1
  • N. J. Mason
    • 1
  • R. J. Nicholas
    • 1
  • G. M. Sundaram
    • 1
  • P. J. Walker
    • 1
  • R. J. Warburton
    • 1
  1. 1.Clarendon LaboratoryOxfordUK
  2. 2.Plessey ResearchCaswell, TowcesterUK

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