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Magnetospectroscopy of MOCVD Grown GaInSb/Gasb Strained Layer Quantum Wells

  • G. Rees
  • S. K. Haywood
  • R. W. Martin
  • N. J. Mason
  • R. J. Nicholas
  • G. M. Sundaram
  • P. J. Walker
  • R. J. Warburton
Part of the NATO ASI Series book series (NSSB, volume 253)

Abstract

Biaxial strain in a pseudomorphically grown heterostructure provides a further item in the toolkit of the band structure engineer, complementing alloying and quantum confinement. It is a valuable asset for constructing new materials offering improved optoelectronic device performance. Modeling and design of devices is an important step[1–4] in the fabrication process and demands a knowledge of these factors of strain, confinement and material composition on electronic structure. The effective Hamiltonian provides an economical and accurate means of describing band structure for device modeling purposes which automatically includes simplifications due to symmetry.

Keywords

Landau Level Quantum Confinement Heavy Hole Biaxial Strain Luttinger Parameter 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. 1.
    M. Asada, A. Kameyama and Y. Suematsu, IEEE, OE20: 745 (1984)Google Scholar
  2. 2.
    J. Nagle, S. Hersee, M. Krakowski, T. Weil and C. Weisbuch, Appl. Phys. Lett., 49: 1325 (1986)CrossRefGoogle Scholar
  3. 3.
    D.J. Robbins, Proc. Conf. SPIE, Novel Optoel. Devices 800: 34 (1984)Google Scholar
  4. 4.
    A.J. Holden, Proc. 17th ESSDERC, Bologna, Italy, p 487 (1987)Google Scholar
  5. 5.
    R.J. Warburton, G.M. Sundaram, R.J. Nicholas, S.K. Haywood, G.J. Rees, N.J. Mason and P.J. Walker, Surf. Sci., 228: 270 (1990)CrossRefGoogle Scholar
  6. 6.
    R.W. Martin, R.J. Nicholas, G.J. Rees, S.K. Haywood, N.J. Mason and P.J. Walker, to be published.Google Scholar
  7. 7.
    E.P. O’Reilly and G.P. Witchlow, Phys. Rev. B, 34: 6030 (1986)CrossRefGoogle Scholar
  8. 8.
    M.H. Weiler, Semiconductors and Semimetals, Eds. R.K. Willardson and A.C. Beer (Academic, NY 1981) 16: 119Google Scholar
  9. 9.
    L.R. Ram-Mohan, K.H. Yoo and R.L. Aggarwal, Phys. Rev. B, 38: 6151 (1988)CrossRefGoogle Scholar
  10. 10.
    F. Ancilotto, A. Fasolino and J.C. Maan, Phys. Rev. B, 38: 1788 (1988)CrossRefGoogle Scholar
  11. 11.
    M. Altarelli, U. Ekenberg and A. Fasolino, Phys. Rev. B, 32: 5138 (1985)CrossRefGoogle Scholar
  12. 12.
    L..C. Andreoni, A. Pasquarello and F. Bassani, Phys. Rev. B, 36: 887 (1987)CrossRefGoogle Scholar
  13. 13.
    N.O. Lipari and M. Altarelli, Phys. Rev. B, 15: 4883 (1977)CrossRefGoogle Scholar
  14. 14.
    C.G. Van de Walle, Phy. Rev. B, 39: 1871 (1989); C.G. Van de Walle and R.M. Martin, to be ublished.CrossRefGoogle Scholar
  15. 15.
    A.P. Roth and E. Fortin, Can. J. Phys., 56: 1486 (1978)CrossRefGoogle Scholar
  16. 16.
    M.F.H. Schuurmans and G.N. ’t Hooft, Phys. Rev. B, 31: 8041 (1985), A.C.G. Wood, private communication.CrossRefGoogle Scholar
  17. 17.
    R. Eppenga, M.F.H. Schuurmans and S. Colak, Phys. Rev. B, 36: 1554 (1987)CrossRefGoogle Scholar
  18. 18.
    M. Altarelli, Phys. Rev. B, 28: 842 (1983)CrossRefGoogle Scholar
  19. 19.
    S.K. Haywood, A.B. Henriques, N.J. Mason, R.J. Nicholas and P.J. Walker, Semicond. Sci. Technol., 3: 315 (1988)CrossRefGoogle Scholar
  20. 20.
    F. Stern and W.E. Howard, Phys. Rev., 163: 816 (1967)CrossRefGoogle Scholar
  21. 21.
    F. Stern, Phys. Rev. Lett., 21: 1687 (1968)CrossRefGoogle Scholar
  22. 22.
    R.W. Martin, R.J. Warburton, R.J. Nicholas, G.J. Rees, S.K. Haywood, N.J. Mason, P.J. Walker, M. Emeny and L.K. Howard, to be published.Google Scholar
  23. 23.
    Y. Iye, E.E. Mendez, W.I. Wang and L. Esaki, Phys. Rev. B, 33: 5854 (1986)CrossRefGoogle Scholar
  24. 24.
    K.D. Bowers and J. Owen, Reports on Prog. in Phys.. 18: 304 (1955)CrossRefGoogle Scholar

Copyright information

© Plenum Press, New York 1991

Authors and Affiliations

  • G. Rees
    • 1
    • 2
  • S. K. Haywood
    • 1
  • R. W. Martin
    • 1
  • N. J. Mason
    • 1
  • R. J. Nicholas
    • 1
  • G. M. Sundaram
    • 1
  • P. J. Walker
    • 1
  • R. J. Warburton
    • 1
  1. 1.Clarendon LaboratoryOxfordUK
  2. 2.Plessey ResearchCaswell, TowcesterUK

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