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Strained Layer Heterostructures and Superlattices Based on Group IV Elements

  • G. Abstreiter
  • K. Eberl
  • E. Friess
  • U. Menczigar
  • W. Wegscheider
Part of the NATO ASI Series book series (NSSB, volume 253)

Abstract

Heterostructures and superlattices based on the group IV elements Si, Ge and α-Sn are fabricated by low temperature molecular beam epitaxy. The main problems of high quality growth are the large lattice mismatch and the strong interdiffusion and segregation. We have performed detailed investigations of growth mode, interface sharpness, critical thickness of the Si/Ge and Ge/α-Sn systems. LEED, TEM, Auger- and Raman spectroscopy are used as “in situ” and “ex-situ” analytical tools. The achievement of short period superlattices with nearly atomically sharp interfaces is possible.

Keywords

Large Lattice Mismatch Super Lattice Strain Layer Superlattices Individual Layer Thickness Average Sound Velocity 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Plenum Press, New York 1991

Authors and Affiliations

  • G. Abstreiter
    • 1
  • K. Eberl
    • 1
  • E. Friess
    • 1
  • U. Menczigar
    • 1
  • W. Wegscheider
    • 1
  1. 1.Walter Schottky InstitutTechnische UniversitätMünchen, GarchingGermany

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