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Epitaxial Growth of Strained III/V Semiconductor Alloys — Composition and Microstructure

  • G. B. Stringfellow
Part of the NATO ASI Series book series (NSSB, volume 253)

Abstract

Microscopic and macroscopic strain are enormously important factors in the energetics of III/V alloys. The enthalpy of mixing, previously thought to be due to so-called “chemical” effects, is in fact a result of the microscopic strain energy of the system due to distorting the bonds. The attempts of the system to minimize the strain energy have profound effects on the epitaxial growth of semiconductor alloys. This paper will begin with a review of the thermodynamics of mixing of III/V alloys. This will be the basis of a discussion of the effects of lattice mismatch on solid composition for epitaxial growth by liquid phase epitaxy, molecular beam epitaxy, and organometallic vapor phase epitaxy. The macroscopic strain energy also stabilizes alloys which would be unstable in the bulk, thus allowing the growth of pseudomorphic alloys. Nonrandom atomic arrangements are adopted by the system in an attempt to minimize strain energy, including clustering and phase separation as well as the formation of atomically ordered structures.

Keywords

Epitaxial Layer Epitaxial Growth Liquid Phase Epitaxy Semiconductor Alloy Solid Composition 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Plenum Press, New York 1991

Authors and Affiliations

  • G. B. Stringfellow
    • 1
  1. 1.University of UtahSalt Lake CityUSA

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