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Transport Properties of AlxGal-XAs/GaAs Heterostructures: Theoretical Results

Part of the NATO ASI Series book series (NSSB, volume 253)

Abstract

We discuss unconventional electronic properties of disordered electron gases in AlxGal-xAs/GaAs heterostructures. The unconventional electronic properties arise because of the long-range random potential (for remote doping and background doping), and the existance of plasmons in an interacting electron gas. The scattering time, the single-particle relaxation time, and the frequency-dependent scattering time are calculated. Localization phenomena are discussed. The theoretical results are compared with experiments.

Keywords

Strong Disorder Dynamical Conductivity Background Doping Scattering Time Weak Localization Effect 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Plenum Press, New York 1991

Authors and Affiliations

  • A. Gold
    • 1
  1. 1.Department of Physics Massachusetts Institute of TechnologyCambridgeUSA

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