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Condensed Systems of Low Dimensionality pp 247–260Cite as

Folklore and Science in High Mobility MOSFETs

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Part of the book series: NATO ASI Series ((NSSB,volume 253))

Abstract

In the last decade a gradual increase in the mobility of silicon MOSFETs has occurred. Interest in higher mobilities is primarily related to the discovery of the Quantum Hall effect in 1980, for which high mobilities are essential. At the same time improved control of GaAs molecular beam epitaxy started to provide samples with much higher mobilities to study the properties of the two-dimensional electron gas (2DEG). Samples with record values up to 12 106 cm2/Vs are now grown. Understandably, a substantial part of the research on 2DEGs has shifted towards GaAs. Yet, although much less dramatic the mobilities in Si MOSFETs have increased as well, from values around 20,000 in 1980 to maximum values of 50,000 cm2/Vs now. Despite the impressive effort in the use of silicon in the IC industry an obvious technological recipe to further increase the mobility in MOSFETs has not emerged. Higher mobilities would be of interest to study material dependent properties of low dimensional electrons. They would also be of interest for future developments of submicron devices based on, for example, quantum ballistic transport.

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Author information

Authors and Affiliations

  1. Department of Applied Physics Materials Science Center, University of Groningen, Nijenborgh 18, 9747 AG, Groningen, The Netherlands

    G. H. Kruithof & T. M. Klapwijk

Authors
  1. G. H. Kruithof
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  2. T. M. Klapwijk
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Editor information

Editors and Affiliations

  1. University of Leicester, Leicester, UK

    J. L. Beeby

  2. University of Michigan, Ann Arbor, Michigan, USA

    P. K. Bhattacharya

  3. CNRS-PIRSEM, Paris, France

    P. Ch. Gravelle

  4. Technical University of Munich, Garching, Germany

    F. Koch

  5. National Research Council, Ottawa, Canada

    D. J. Lockwood

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© 1991 Plenum Press, New York

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Kruithof, G.H., Klapwijk, T.M. (1991). Folklore and Science in High Mobility MOSFETs. In: Beeby, J.L., Bhattacharya, P.K., Gravelle, P.C., Koch, F., Lockwood, D.J. (eds) Condensed Systems of Low Dimensionality. NATO ASI Series, vol 253. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-1348-9_19

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  • DOI: https://doi.org/10.1007/978-1-4684-1348-9_19

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4684-1350-2

  • Online ISBN: 978-1-4684-1348-9

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