Abstract
The films described here were synthesyzed using a molecular beam epitaxy (MBE) system specifically constructed for in situ growth of thin films of various high-Tc copper oxides and related compounds1. The system contains six thermal effusion cells equipped with computer-controlled beam shutters. Oxidation is accomplished using an ozone beam supplied by a UV discharge generator/silica gel cold-trap separator system, and monitored during the growth by a quadrupole mass spectrometer. Rutherford Backscattering (RBS) is utilized to determine the chemical composition and callibrate the atomic fluxes.
Keywords
- Molecular Beam Epitaxy
- Reflection High Energy Electron Diffraction
- Rutherford Backscatter
- Atomic Flux
- Reflection High Energy Electron Diffraction Pattern
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References
J.N. Eckstein, D.G. Schlom, E.S. Hellman, K.E. von Dessonneck, Z.J. Chen, C. Webb, F. Turner, J.S. Harris, Jr., M.R. Beasley, and T.H. Geballe, J. Vac. Sci. Technol. B7, 319 (1989).
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© 1990 Plenum Press, New York
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Bozovic, I., Eckstein, J.N., Schlom, D.G., Harris, J.S. (1990). In-Situ Growth of Superconducting Single Crystal Bi-Sr-Ca-Cu-O Thin Films by Molecular Beam Epitaxy. In: McConnell, R.D., Noufi, R. (eds) Science and Technology of Thin Film Superconductors 2. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-1345-8_39
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DOI: https://doi.org/10.1007/978-1-4684-1345-8_39
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