Effect of Chemical Cleaning Sequencing on Particle Addition/Reduction on Silicon Wafers

  • Charlie A. Peterson

Abstract

The purpose of this study was to determine what effects, if any, differing chemical sequences had on the particle levels of silicon wafers. The chemical solutions studied are: sulfuric acid, hydrogen peroxide mix (SPM); ammonium hydroxide, hydrogen peroxide, DI water mix (APM); hydrochloric acid, hydrogen peroxide, DI water mix (HPM); dilute hydrofluoric acid (DHF).

Keywords

Silicon Wafer Particle Count Particle Level Chemical Sequence Particle Performance 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. 1.
    S.R. Hofstein, IEEE Trans. On Elect. Dev. ED-14, 749 (1967).CrossRefGoogle Scholar
  2. 2.
    E.H.Snow, A.S.Grove, B.E.Deal, and C.T.Sah, J. Appl. Phys. 36, 1664 (1965).CrossRefGoogle Scholar
  3. 3.
    A.Goetzberger, and W.Shockley, J. Appl. Phys. 31, 1821 (1960).CrossRefGoogle Scholar
  4. 4.
    W.M.Bullls, Solid State Elect. 9, 143 (1966).CrossRefGoogle Scholar
  5. 5.
    D.C.Burkman, C.A.Peterson, L.A.Zazzera, R.Kopp, and D.S. Becker, FSI Technical Report-TR 317 (1988). Available from author.Google Scholar
  6. 6.
    D.C.Burkman, Semiconductor International, 4(7), 103 (1981).Google Scholar
  7. 7.
    W.Kern, RCA Review, 31, 207 (1970).Google Scholar
  8. 8.
    W.Kern, ’RCA Review, 31, 234 (1970).Google Scholar
  9. 9.
    W.Kern, and D.A.Puotinen, RCA Review, 31, 187 (1970).Google Scholar
  10. 10.
    R.L.Meek, T.M.Buck, and C.F.Gibbon, J. Electrochem Soc. 120, 1241 (1973).CrossRefGoogle Scholar
  11. 11.
    D.S.Becker, W.R.Schmidt, C.A.Peterson, and D.C.Burkman, in “ Microelectronics Processing:Inorganic Materials Characterization” , L. A. Casper, Ed., ACS Symposium Series No. 295, pp. 366–376, American Chemical Society, Washington, DC 1986.CrossRefGoogle Scholar
  12. 12.
    D.C.Burkman, W.R.Schmidt, C.A.Peterson, B.F.Phillips, in “ Proc. Semiconductor 83 International” , Birmingham, England Sept. 1983. Also available form the authors as FSI TR217.Google Scholar
  13. 13.
    Feder, D. o., and D.E.Koontz, in “ Cleaning of Electronic Device Components” , ASTM STP No. 246, American Society for ’Testing and Materials, Philadelphia, 40, 1959.Google Scholar
  14. 14.
    D.A.Peters, and C.A.Decker, J. Electrochem. Soc. 126(5), 883 (1979).CrossRefGoogle Scholar
  15. 15.
    J.A.Amick, Solid State Technol.19(11), 47 (1976).Google Scholar
  16. 16.
    J.R.Monkowski, in “ Treatise on Clean Surface Technology” , Vol.1, K.L.Mittal, Ed., pp. 123–148, Plenum Press, New York, 1987.Google Scholar
  17. 17.
    K.D.Beyer, and R.H.Kastl, J. Electrochem. Soc. 129(5), 1027 (1982).CrossRefGoogle Scholar
  18. 18.
    J.R.Mehta, FSI Technical Report TR270, 1985. Available from the author.Google Scholar

Copyright information

© Plenum Press, New York 1988

Authors and Affiliations

  • Charlie A. Peterson
    • 1
  1. 1.FSI International, IncChaskaUSA

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