Thermal Conductivity of Heavily Doped p-Type Indium Antimonide
The thermal conductivity of p-type InSb is strongly influenced by the scattering of phonons by free carriers. This was first suggested by Challis et al.1 on the basis of measurements of the thermal conductivity of several n- and p-type samples over the temperature range of 1.2K to 4.2K. Crosby and Grenier2 extended the measurements to dopings in excess of 1018 acceptors per cm3. They successfully accounted for the observed temperature dependence in the range 1.3K to 4.2K by modifying Ziman’s3 hole-phonon scattering relaxation time to include the effect of screening. Kosarev et al.4 further measured a group of n- and p-type samples from 2K to 100K. They generalized Callaway’s5 model by using separate drift terms for longitudinal and transverse phonons and were able to estimate the contribution of hole-phonon scattering to both types of modes. They used a formula for hole-phonon scattering which included the influence of the coulomb field of the impurity ions on the scattering process. A good fit to the data was obtained in the range of about 2K to 7K. In previous work6 at this laboratory Holland’s7 thermal conductivity formalism was applied to measurements made on a heavily doped p-type InSb sample.
KeywordsThermoelectric Power Hall Effect Measurement Indium Antimonide Order Elastic Constant Observe Temperature Dependence
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