Abstract
Results and interpretations are presented of computer simulation calculations of the channeling and the blocking effect for light energetic ions in the <110> channel of silicon. Oscillations of hyperchanneled ions were detected in the case of channeling. The rule of reversibility is shown to apply for channeling and blocking when equating initial beam divergence and detector acceptance angle. The dechanneling cross section by defects is shown not to be constant over the channel area. Applicability of analytical models and implications for the analysis of experiments are discussed.
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Pabst, H.J. (1975). Flux Peaking, Dechanneling Cross Section, and Detection Probability in Channeling and Blocking Experiments from Computer Simulations and Analytical Models. In: Datz, S., Appleton, B.R., Moak, C.D. (eds) Atomic Collisions in Solids. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-8996-9_25
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DOI: https://doi.org/10.1007/978-1-4615-8996-9_25
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