Abstract
An international group of laboratories have collaborated in a standards project aimed at examining the principal (and sometimes elusive) factors which can influence the absolute quantitative interpretation of backscattering analysis spectra. Identically prepared samples of Bi implanted* in Si, and others of 2000 Å Pt on oxidized silicon substrates were distributed to the participants together with a detailed prescription for comparative runs which all labs would then follow in nominally identical fashion.
Spectra were taken for the Bi implants, the Pt films and thin Si02/Si substrates scattering 1He+ ions at 1.9 and 1.0 MeV and using Si detectors at 165° to the incident beam.
The intercomparison of results obtained so far will be made, with special reference to energy straggling effects, absolute mass (atoms/cm2) and energy calibrations, and system linearity and resolution.
We will also discuss “reference” spectra from the same Pt films, obatained with the high resolution magnetic spectrometer at Bell Laboratories, with a system resolution of 650 eV.
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© 1976 Springer Science+Business Media New York
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Baglin, J.E.E. (1976). Progress Report on the Backscattering Standards Project. In: Meyer, O., Linker, G., Käppeler, F. (eds) Ion Beam Surface Layer Analysis. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-8876-4_27
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DOI: https://doi.org/10.1007/978-1-4615-8876-4_27
Publisher Name: Springer, Boston, MA
Print ISBN: 978-1-4615-8878-8
Online ISBN: 978-1-4615-8876-4
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