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Superconductivity in d- and f-Band Metals pp 489–505Cite as

Defect Production and Stoichiometry in A-15 Superconductors

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Abstract

The dependence of Tc upon stoichiometry and 2 MeV 4He induced damage has been investigated in Nb3Ge, Nb3Sn, V3Si and V3Ge super-conducting thin films. Optimum values of Tc are obtained for Nb:Ge and Nb:Sn ratios throughout the range of 2.6:1 – 3:1 in 95% single phase A-15 films. This is inconsistent with anti-structure (anti-site) defects leading to great degradations in T. Similar Tc vs 4He dose plots are observed for all materials; at high doses Tc saturates at values of 3.5 K (Nb3Ge), 2.95 K (Nb3Sn), 2.2 K (V3Si) and 1.0 K (V3Ge). Defects introduced by the 4He bombardment produce Tc-resistance ratio correlations similar to that for as-grown films.

Work at Stanford sponsored by the Air Force, grant AFOSR73-2435.

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Author information

Authors and Affiliations

  1. Bell Laboratories, Murray Hill, New Jersey, 07974, USA

    J. M. Poate, R. C. Dynes & L. R. Testardi

  2. W.W. Hansen Laboratories, Stanford University, Stanford, California, 94305, USA

    R. H. Hammond

Authors
  1. J. M. Poate
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  2. R. C. Dynes
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  3. L. R. Testardi
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  4. R. H. Hammond
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Editor information

Editors and Affiliations

  1. University of Rochester, Rochester, New York, USA

    D. H. Douglass

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© 1976 Plenum Press, New York

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Poate, J.M., Dynes, R.C., Testardi, L.R., Hammond, R.H. (1976). Defect Production and Stoichiometry in A-15 Superconductors. In: Douglass, D.H. (eds) Superconductivity in d- and f-Band Metals. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-8795-8_29

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  • DOI: https://doi.org/10.1007/978-1-4615-8795-8_29

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4615-8797-2

  • Online ISBN: 978-1-4615-8795-8

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