Influence of Magnetic Fields on Emission Spectra of p-n Junctions in InAs, InSb, and PbSe

Abstract

A. Samples. Injection lasers with p-n junctions were fabricated by the diffusion of cadmium or zinc into n-type indium arsenide with an initial donor (Te) concentration n = (2.5–3.0) × 10¹⁸ cm^-3 and with an electron mobility of (8–10) × 10³ cm² · V^-1 · sec^-1 at 300°K. A p-n junction was typically located at a depth of 20–50 μ. A Fabry—Perot resonator was obtained by cleaving along the (110) crystallographic planes at right-angles to the p-n junction plane. A film of gold was evaporated on the p- and n-type regions and contacts were indium-soldered to these regions. Diodes were placed in a copper corner holder.