Abstract
Since all the investigated radiation sources were operated in the pulsed regime (pulse duration ranged from 0.1 to 10 μsec), the emission spectra were determined by a synchronous detection method similar to that described in [55]. This method was modified by replacing a generator of high-power pulses based on a hydrogen thyratron with a small-size semiconductor pulse generator [56], which was essentially a current aplifier (emitter follower). This generator was composed of two high-power transistors of the 2T803A type and it could deliver a power of ~ 1 kW (a current of about 30 A) to an active load of 1 Ω.
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© 1976 Consultants Bureau, New York
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Basov, N.G. (1976). Experimental Method. In: Basov, N.G. (eds) Optical Properties of Semiconductors. The Lebedev Physics Institute Series, vol 75. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-7548-1_2
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DOI: https://doi.org/10.1007/978-1-4615-7548-1_2
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