Abstract
Recent research is classified and surveyed on film crystallization and epitaxy from ion-molecular beams. Experimental results on low-temperature ion-molecular epitaxy for semiconductors are examined: effects of ion type, current density, energy spectrum, and other parameters. Studies have also been made on the effects of ion bombardment related to energy, momentum, and charge transfer to the substrate as regards the chemical purity of the surface, the defect density, and the surface charge, which influence nucleation, surface diffusion, nucleus coalescence, and so on. The possible mechanisms for ion-molecular epitaxy are discussed.
This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
Literature Cited
C. Weissmantel, in: Proceedings of the Seventh International Vacuum Congress and Third International Conference on Solid Surfaces, Vienna, F. Berger and Sohne (1977), pp. 1533–1544.
S. Schiller, V. Heising, and K. Goedicke, in: Proceedings of the Seventh International Vacuum Congress and Third International Conference on Solid Surfaces, Vienna, F. Berger and Sohne (1977), pp. 1545–1552.
I. S. Golligon, W. A. Grant, I. S. Williams, and R. P. W. Lawson, in: Proceedings of the International Conference on Application of Ion Beams to Metals, Univ. of Warwick, 1975, London; Inst. Phys. Conf. Ser., No. 28 (1976), Chapter 9, pp. 357–364.
R. P. W. Lawson, I. H. Freeman, I. S. Golligon, et al., Nucl. Instrum. Methods, 131, 567 (1975).
I. Amano and R. P. W. Lawson, J. Vac. Sci. Technol., 14, 690–696 (1977).
I. Amano and R. P. W. Lawson, J. Vac. Sci. Technol., 15, 118–119 (1978).
L. N. Aleksandrov, A. S. Lutovitch, and E. D. Belorusets, Phys. Status Solidi (a), 54, 463–469 (1979).
T. Itch, T. Nakamura, M Muromachi, and T. Sugiyama, Jpn. J. Appl. Phys., 16, 553–557 (1977).
Y. Nanba and T. Mori, J. Vac. Sci. Technol., 13, 693–696 (1976).
A. S. Lyutovich and K. F. Klimenko, in: Synthesis and Growth of Perfect Semiconductor Crystals and Films [in Russian], Nauka, Novosibirsk (1981), pp. 62–66.
T. Itoh and T. Nakamura, Radiat. Effects, 9, 1–4 (1971).
T. Takagi, I. Yamada, A. Sasaki, et al., in: Proceedings of the Seventh International Vacuum Congress and Third International Conference on Solid Surfaces, Vienna, F. Berger and Sohne (1977), pp. 1603–1610.
T. Takagi, I. Yamada, K. Matsubara, and H. Takaoka, J. Cryst. Growth, 45, 318–324 (1978).
T. Takagi, I. Yamada, and A. Sasaki, in: Proceedings of the Seventh International Vacuum Congress and Third International Conference on Solid Surfaces, Vienna, F. Berger and Sohne (1977), pp. 1915–1922.
K. Yagi, S. Tamura, and T. Tokuyama, Jpn. J. Appl. Phys., 16, 245–251 (1977).
A. S. Lyutovich, Ion-Activated Film Crystallization [in Russian], Fan, Tashkent (1982).
V. F. Dorfman, Micrometallurgy in Microelectronics [in Russian], Metallurgiya, Moscow (1978).
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 1987 Springer Science+Business Media New York
About this chapter
Cite this chapter
Lyutovich, A.S. (1987). Ion-Molecular Epitaxy. In: Givargizov, E.I. (eds) Growth of Crystals. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-7122-3_4
Download citation
DOI: https://doi.org/10.1007/978-1-4615-7122-3_4
Publisher Name: Springer, Boston, MA
Print ISBN: 978-1-4615-7124-7
Online ISBN: 978-1-4615-7122-3
eBook Packages: Springer Book Archive