Abstract
One of the recent achievements in crystal growth is the progress in direct pulling of shaped crystals (rods, ribbons, tubes, films, etc.) from the melt by various modifications of the Stepanov technique (Fig. 1). All of these modifications are based on creating a molten column outside of the crucible walls by using a novel element, namely, edge-definer (die shaper) which is absent in all other growth methods [1]. Stepanov’s techniques are used to grow crystals of semiconductors, dielectrics, and metals. The data for shaped single crystals successfully grown by various authors using these techniques (see Fig. 1) are given in Table 1 [2]. The table shows that a fairly wide range of materials with various thermal and capillary characteristics has been covered.
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Literature Cited
A. V. Stepanov. Growth of shaped crystals. Izv. AN SSSR, Ser. Fiz.,33, 1944–1953 (in Russian) (1969).
P. I. Antonov, S. P. Nikanorov, and V. A. Tatarchenko. The growth of controlled profile crystals by Stepanov’s method. J. Cryst. Growth, 42, 440–452 (1977).
V. A. Tatarchenko. Stability of Crystallization in edge-defined film-fed growth from the melt. See this volume, p.
N. V. Bessonova, D. I. Levinzov, V. V. Peller, Yu. M. Smirnov, and L. P. Stolyarchuk. Structure and impurity distribution by Stepanov’s techniques. Izv. AN SSSR, Ser. Fiz., 2013–2015 (in Russian) (1969).
G. V. Sachkov, V. A. Tatarchenko, and D. I. Levinzon. Control of edge-defined film-fed growth of single crystals. Izv. AN SSSR, Ser. Fiz„ 37, 2288–2291 (in Russian) (1973).
P. I. Antonov, N. S. Grigoryev, and A. V. Stepanov. Symmetry in germanium single crystals grown from the melt by Stepanov’s techniques. Izv. AN SSSR, Ser. Fiz.,35, 447–451 (in Russian) (1971).
P. I. Antonov, S. I. Bakholdin, and V. M. Krymov. Effect of faceting on dislocation structure in shaped germanium crystals. Izv. AN SSSR, Ser. Fiz., 37, 2328–2333 (in Russian) (1973).
Yu. G. Nosov, P. I. Antonov, and A. V. Stepanov. Twinning and distribution of dislocations in the growth of shaped InSb single crystals. Izv. AN SSSR, Ser. Fiz., 35, 495–498 (in Russian) (1971).
T. Surek, C. B. Hari Rao, J. C. Swartz, and L. C. Garone. Surface morphology and shape stability in silicon ribbons grown by the edge-defined, film-fed growth process. J. Cryst. Growth, 124, 112–123 (1977).
P. I. Antonov, N. S. Grigoryev, and A. V. Stepanov. Orientational deviation in shaped germanium crystals grown from the melt. Izv. AN SSSR, Ser. Fiz., 36, 486–498 (in Russian) (1972).
P. I. Antonov and A. V. Stepanov. Peculiarities of shaped germanium crystals grown from the melt by Stepanov’s techniques. In: IVth USSR Conference on Crystal Growth, Yerevan AN ArmSSR Publishing House, Yerevan, 2, 167–170 (in Russian) (1972).
N. V. Bessonova, D. I. Levinzon, Yu. M. Smirnov, Yu. I. Sterlikov, A. V. Stepanov and S. V. Tsikhotsky. Analysis of inhomogeneous impurity distribution in shaped germanium crystals. In: Silicon and Germanium. Metallurgiya, Moscow, 2, 84–87 (in Russian) (1970).
S. S. Vakhrameyev, V. V. Osvensky, and V. A. Smirnov. Dislocation structure of single crystals in thermal stress field calculated taking into account the radial and axial changes of ingot temperature in the course of growth. In: IVth USSR Conference on Crystal Growth, Yerevan, AN ArmSSR Publishing House, Yerevan, 2, 81–84 (in Russian) (1972).
P. I. Antonov, E. V. Galaktionov, V. M. Krymov, and V. S. Yuferev. Analysis of thermoelastic stresses in germanium ribbons grown by Stepanov’s techniques. Izv. AN SSSR, Ser. Fiz., 40, 1419–1425 (in Russian) (1976).
P. I. Antonov, E. N. Kolesnikova, V. M. Krymov, S. P. Nikanorov, M. P. Proskura, and V. S. Yuferev. Temperature distribution in shaped germanium crystals grown from the melt by Stepanov’s techniques. Izv. AN SSSR, Ser. Fiz., 40 1407–1413 (in Russian) (1976).
P.I. Antonov and V. M. Krymov. Effect of geometry of shaped single crystals on thermal stress generated in the course of growth from the melt. In: 1st Symposium on Growth and Synthesis of Semiconductor Crystals and Films, Novosibirsk. Abstracts, Inst, of Inorganic Chemistry, SO AN SSR, Inst.of Physics of Semiconductors, SO AN SSSR, Novosibirsk, 112 (in Russian) (1978).
E. V. Galaktionov, V. M. Krymov, E. N. Kolesnikova, S. I. Bakholdin, N. B. Guseva, I. L. ShuL’pina and P. I. Antonov. Generation of dislocation structure by thermal stress in germanium ribbon-shaped single crystals. In: Vth USSR Conference on Crystal Growth, Tbilisi. Abstracts, Inst, of Cybernetics of AN GSSR, Tbilisi, 2, 240–241 (in Russian) (1977).
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Antonov, P.I. (1986). Shape and Properties of Crystals Grown from the Melt by the Stepanov Techniques. In: Givargizov, E.I. (eds) Growth of Crystals. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-7119-3_20
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DOI: https://doi.org/10.1007/978-1-4615-7119-3_20
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