Abstract
Estimates based on the simplest kinetic equation of adsorption show that the Si (111) face which is in equilibrium with a gas system Si-H-Cl at T=1500 K must be covered almost completely by chlorine and hydrogen atoms and by SiCl2 molecules [1] (later Chernov and Popkov studied the silicon system in more detail). A similar conclusion was drawn for the Si-H-Br system on the basis of similar but even cruder estimates [2] and for the system Si-H-Cl on the basis of a quantitative analysis of experimental data [3]. A more consistent analysis of adsorption and normal growth was made for the GaAs (100) face in the system Ga-As-H-Cl [4]; however, it seems that in this case not all of the principal species present were taken into account, and the method of calculation has not been published. Adsorption on the GaAs (111) face has not yet been calculated. The present paper presents a fundamental approach to calculations dealing with adsorbed layers in growth systems involving chemical reactions, using the faces GaAs (111) and Si (111) in the systems Ga-As-H-Cl and Si-H-Cl, respectively, as specific illustrations.
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Chernov, A.A., Ruzaikin, M.P. (1986). Equilibrium Adsorption Layers on GaAs (111) and Si (111) Surfaces in CVD Growth. In: Givargizov, E.I. (eds) Growth of Crystals. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-7119-3_2
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DOI: https://doi.org/10.1007/978-1-4615-7119-3_2
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