Abstract
The current theories of crystal growth based on kinetic equations possess a number of important shortcomings. In particular, these equations are capable of describing in single-component systems only individual “extreme” growth mechanisms (normal, nucleation, spiral); the kinetics of crystallization in complex compounds is usually described by analogy with single-component systems, namely, supercooling is replaced in the appropriate equations by super saturation of the disordered (liquid or vapor) phase. The difficulties encountered in constructing equations describing growth kinetics over a wide range of values of system parameters led to the development of a direct method: Monte Carlo computer simulation of crystal growth. In the present paper, based on the ideas developed in [1–15], we give a statistical-mechanic description of the techniques valid for simulating crystal growth both in single-component and in multi-component crystals.
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© 1986 Consultants Bureau, New York
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Cherepanova, T.A. (1986). General Approach to Monte Carlo Simulation of Crystal Growth. In: Givargizov, E.I. (eds) Growth of Crystals. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-7119-3_17
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DOI: https://doi.org/10.1007/978-1-4615-7119-3_17
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