Abstract
The structure and habit of crystals of silicon carbide strongly depend on the procedure used for their production. In different growth conditions characterized by the type of silicon and carbon source, the temperature, and the presence of impurities, an extensive series of different modifications (polytypes) has been obtained, while the habits may vary from lamellar to acicular. The polytypes, e.g., cubic (β) 3C and hexagonal (α) 2H, 4H, 6H, and 15R, may all be described as stacking variants of hexagonal close-packed double layers [1, 2].
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Bootsma, G.A., Knippenberg, W.F., Verspui, G. (1984). Growth and Tranformation of SiC Whiskers. In: Chernov, A.A. (eds) Рост Кристаллоь / Rost Kristallov / Growth of Crystals. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-7116-2_6
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DOI: https://doi.org/10.1007/978-1-4615-7116-2_6
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