Abstract
VLSI (Very Large Scale Integration) is responsible for the very complex, yet low-priced, integrated circuits (ICs) that are available today. It is the continuation of a process which began in the mid-1960s when the first ICs began to appear. These circuits employed silicon as the active medium rather than germanium, which had been commonly used for solid-state devices up to 1960. Silicon dioxide was the key feature of this technology: it was readily produced by thermal oxidation of the silicon substrate, it was highly adherent, was insoluble in water (unlike germanium dioxide), was impenetrable by dopants and could be selectively etched with hydrofluoric acid (HF) to form windows for diffusion.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
Further Reading
R. A. Colclaser, Microelectronics: Processing and Device Design, Wiley (1980).
N. G. Einspruch (editor), VLSI Electronics: Microstructure Science, Academic (1985).
W. S. Ruska, Microelectronic Processing, McGraw-Hill (1987).
S. M. Sze (editor), VLSI Technology, 2nd edn, McGraw-Hill (1989). Annual Book of ASTM Standards, part 43 Electronics, ASTM.
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 1990 L. A. A. Warnes
About this chapter
Cite this chapter
Warnes, L.A.A. (1990). VLSI Technology. In: Warnes, L.A.A. (eds) Electronic Materials. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-6893-3_5
Download citation
DOI: https://doi.org/10.1007/978-1-4615-6893-3_5
Publisher Name: Springer, Boston, MA
Print ISBN: 978-1-4615-6895-7
Online ISBN: 978-1-4615-6893-3
eBook Packages: Springer Book Archive